(China (Mainland))
Product Summary
The FF200R17KE3 is a kind of IGBT-Module.
Parametrics
FF200R17KE3 absolute maximum ratings:(1)Collector-emitter voltage,Tvj = 25℃: 1.700 V; (2)DC-collector current TC = 25 ℃: 390 A; (3)Repetitive peak collctor current, tP = 1 ms, TC = 80℃: 400 A; (4)Total power dissipation, TC=25℃: 1250 W; (5)Gate-emitter peak voltage: +/- 20V V; (6)DC forward current: 200 A; (7)Repetitive peak forw. current: tp = 1 ms IFRM 400 A.
Features
FF200R17KE3 characteristic values: (1)collector-emitter saturation voltage: 2.4 V; (2)gate threshold voltage: 5.2 V min, 5.8 V typ, 6.4 V max; (3)gate charge: 1.2 μC; (4)input capacitance: 17 nF; (5)reverse transfer capacitance: 0.6 nF; (6)collector-emitter cut-off current: 5 mA; (7)gate-emitter leakage current: 400 nA
Diagrams
| Image | Part No | Mfg | Description |  |
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 FF200R17KE3 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 390A |
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FF200R17KE3_S4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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