Product Summary

The RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifier applications. The RD70HVF1 is for output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

Parametrics

RD70HVF1 absolute maximum ratings: (1)VDSS Drain tosource voltage: 30 V; (2)VGSS Gateto source voltage: +/-20 V; (3)Pch Channel dissipation Tc=25℃: 150 W; (4)Tj Junction Temperature: 175 ℃; (5)Tstg Storage temperature: -40 to +175 ℃; (6)Rth-c Thermal resistance Junction to case 1.0 ℃/W.

Features

RD70HVF1 features: (1)High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz. Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz; (2)High Efficiency: 60%typ.on VHF Band; (3)High Efficiency: 55%typ.on UHF Band.

Diagrams

RD70HVF1 outline drawing

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